Varadis RADFET VT01
400nm RADFET in Six Lead SOT-23 Plastic Package
For doses between 1 cGy (1 rad) and 1 kGy (100 krad)
The Varadis RADFET is a microelectronic chip, specially engineered to be sensitive to high energy (ionising) radiation. The RADFETs are small, robust, require no power to detect radiation, can easily be integrated into electronic systems, and are cost effective.
RADFET is a discrete p-channel MOSFET optimized for radiation sensitivity. RADFETs are sensitive to ionizing radiation: gamma rays, X-rays, and protons.
The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET and this change is related to the radiation dose. The RADFET response is non-linear and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the device and measuring the DC voltage (in the range of 0.5 to ~8 Volts).
